Archived News
2026
September 2026: Three papers were presented at WiPDA Europe 2026. Evalaution of 1200 V Wide Bandgap Hybrid Switches: SiC MOSFET vs GaN e-HEMT/Si-IGBT (), Investigating the Effects of OFF-State Drain Stress and Gate Stress on the Dynamic ON-Resistance of GaN HEMTs () and Robustness Evaluation of SiC Power MOSFETs Under Bipolar Gate Drive, Near-Avalanche Breakdown, and High-Temperature Switching Stress ().
September 2026: Two papers were presented at ECCE Europe 2026 in Valencia. Evaluation of Third Quadrant Dynamic On-Resistance and Thermal Impedance of GaN e-HEMTS Using Converter Level Switching Tests () and Characterization of Linear Mode Robustness of Silicon and SiC Power MOSFETs ().
July 2026: The paper Trade-off between Avalanche Ruggedness and Short Circuit Performance in Different SiC MOSFET and Cascode JFET Technologies presented at IPEC/ECCE Asia 2026 is available on .
March 2026 : Prof Alatise made a presentation at CIPS 2026 Dresden: A Novel Technique of Bench-Marking Avalanche Ruggedness of SiC MOSFETs using the Third-Quadrant Safe-Operating-Area Energy. The paper is available on
Jan 2026: Dr Ortiz Gonzalez and Professor Alatise are part of the
2025
November 2025: Professor Layi Alatise presented the tutorial "Reliability and Qualification of Wide Bandgap Automotive Power Semiconductors" at the IEEE ITEC Asia Pacific conference in November 2025
October 2025: Jose presented the paper "A Framework for Assessing the 2nd Life Potential of End-of-Life Electric Vehicle Power Electronics for a More Circular Economy" at the ECCE conference 2025 in Philadelphia
September 2025: Professor Alatise and Dr Ortiz Gonzalez presented the tutorial "Reliability and Qualification of Wide Bandgap Automotive Power Semiconductors" at the ECCE Europe 2025 Conference in Birmingham.